SD4017
RF & MICROWAVE TRANSISTORS
806-960 MHz CELLULAR BASE STATIONS
.
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.
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.
.
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GOLD METALLIZATION
DIFFUSED EMITTER BALLASTING
INTERNAL INPUT MATCHING
DESIGNED FOR LINEAR OPERATION
HIGH SATURATED POWER CAPABILITY
COMMON EMITTER CONFIGURATION
P
OUT
=
30 W MIN. WITH 7.5 dB GAIN
畏
C
=
55
%
TYPICAL
TYPICAL LOAD MISMATCH CAPABILITY:
20:1 ALL ANGLES RATED CONDITIONS
10:1 ALL ANGLES @
鹵
20% RATED
VOLTAGE
TYPICAL OVERDRIVE SURVIVABILITY
5 dB
.230 6LFL (M142)
epoxy sealed
ORDER CODE
SD4017
BRANDING
SD4017
PIN CONNECTION
DESCRIPTION
The SD4017 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity class AB operation for
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
1. Collector
2. Base
3. Emitter
Value
Unit
V
CBO
V
CEO
V
EBO
P
DISS
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Supply Voltage
Power Dissipation
Device Current
Junction Temperature
Storage Temperature
48
25
3.5
88
7.5
200
鈭?/div>
65 to +150
V
V
V
W
A
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
擄C/W
July 19, 1994
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