= 300 W MIN. WITH 20 dB GAIN @ 30
鈥?/div>
THERMALLY ENHANCED PACKAGING
M177
DESCRIPTION
The SD2933 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to 150
MHz
epoxy sealed
ORDER CODE
SD2933
BRANDING
SD2933
PIN CONNECTION
1. Drain
2. Source
3. Gate
4. Source
5. Source
ABSOLUTE MAXIMUM RATINGS(T
CASE
= 25
0
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
j
T
STG
R
th(j-c)
R
th(c-s)
Jun 2000
Parameter
Drain Source Volatage
Drain-Gate Voltage (R
GS
= 1M鈩?
Gate-Source Voltage
Drain Current
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
Value
125
125
鹵20
40
648
200
-65 to 150
0
0
Unit
V
V
V
A
W
0
0
C
C
THERMAL DATA
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance*
0.27
0.15
C/W
C/W
1/8
* Determined using a flat aluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent).