廬
SD2922
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s
s
s
s
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 300W MIN. WITH 12.5 dB GAIN
@175 MHz
DESCRIPTION
The SD2922 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2922 is
intended for use in 50V dc large signal
applications up to 200 MHz
M244
epoxy sealed
ORDER CODE
BRANDING
SD2922
SD2922
PIN CONNECTION
1. Drain
2. Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1M鈩?
Gate-Source Voltage
Drain Current
Power Dissipation
Max. O perating Junction Temperature
Storage T emperature
Value
125
125
鹵20
40
500
+200
-65 to 150
3. Source
Uni t
V
V
V
A
W
o
o
C
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case Heatsink Thermal Resistance
鈭?/div>
0.35
0.12
o
o
C/W
C/W
鈭?/div>
Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
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