SD1895-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICATIONS
.
.
.
.
.
.
.
1.65 GHz
28 VOLTS
OVERLAY DIE GEOMETRY
ALL GOLD METALLIZED SYSTEM
HIGH RELIABILITY AND RUGGEDNESS
COOMON BASE
P
OUT
=
15 W MIN. WITH 9.2 dB GAIN
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1895-03
BRANDING
SD1895-3
PIN CONNECTION
DESCRIPTION
The SD1895-03 is a 28 V silicon NPN planar tran-
sistor designed for INMARSAT and other 1.6 GHz
SATCOM applications. This device utilizes poly-
silicon site ballasting with a gold metallized die
to achieve high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
45
15
3.0
3.0
37.2
+200
鈭?/div>
65 to +150
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
July 1993
Junction-Case Thermal Resistance
4.7
擄C/W
1/4
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