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SD1888-03 Datasheet

  • SD1888-03

  • RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

  • 4頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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SD1888-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICATIONS
.
.
.
.
.
.
.
1.65 GHz
28 VOLTS
EFFICIENCY 50% MIN.
CLASS C OPERATION
COMMON BASE
INPUT/OUTPUT MATCHING
P
OUT
=
24 W MIN. WITH 9.0 dB GAIN
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1888-03
BRANDING
1888-3
PIN CONNECTION
DESCRIPTION
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. A gold metallized emit-
ter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-ef-
fective epoxy sealed housing
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
45
12
3.0
2.6
50
+200
鈭?/div>
65 to +150
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
July 1993
Junction-Case Thermal Resistance
3.5
擄C/W
1/4

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