SD1730 (TH560)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.
.
.
.
.
.
.
.
OPTIMIZED FOR SSB
30 MHz
28 VOLTS
IMD
鈭?0dB
EFFICIENCY 40%
COMMON EMITTER
GOLD METALLIZATION
P
OUT
=
220 W PEP WITH 12 dB GAIN
.500 4 LFL (M174)
epoxy sealed
ORDER CODE
SD1730
BRANDING
TH560
PIN CONNECTION
DESCRIPTION
The SD1730 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. The devices utlizes emitter bal-
lasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
4. Emitter
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
70
35
4.0
16
320
+200
鈭?/div>
65 to +150
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
September 7, 1994
Junction-Case Thermal Resistance
0.6
擄C/W
1/6
next