Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Features
q
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (Ta=25藲C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
300
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 20mA
*2
I
C
= 500mA, I
B
= 20mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
0.6
*2
min
typ
max
100
2.0鹵0.2
(Ta=25藲C)
marking
+0.2
0.45鈥?.1
s
Absolute Maximum Ratings
15.6鹵0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
Low collector to emitter saturation voltage V
CE(sat)
.
Unit
nA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
800
V
V
MHz
pF
鈩?/div>
Pulse measurement
*1
h
FE1
Rank classification
R
200 ~ 350
S
300 ~ 500
T
400 ~ 800
*3
R
on
Measurement circuit
1k鈩?/div>
Rank
h
FE1
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
R
on
=
V
B
!1000(鈩?
V
A
鈥揤
B
1
1
2
