SD1423
RF & MICROWAVE TRANSISTORS
800-960MHz BASE STATION APPLICATIONS
.
.
.
.
.
.
.
800 - 960 MHz
24 VOLTS
EFFICIENCY 50%
COMMON EMITTER
GOLD METALLIZATION
CLASS AB LINEAR OPERATION
P
OUT
=
15 W MIN. WITH 8.0 dB GAIN
.2 3 0 6 LFL (M11 8 )
epoxy sealed
O R DE R CODE
SD1423
BRANDING
SD1423
DESCRIPTION
The SD1423 is a gold metallization epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation for
cellular base station applications. The SD1423 is
designed as a medium power output device or as
the driver for the SD1424.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Un it
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
48
25
45
3.5
2.5
29
+200
鈭?/div>
65 to +150
V
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
6
擄C/W
August 22, 1996
1/4
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