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廬

SD1414-12

RF & MICROWAVE TRANSISTORS

800-900 MHz APPLICATIONS

PRELIMINARY DATA

s

s

s

s

960 MHz

13.5 VOLTS

COMMON BASE

P

OUT

= 40 W MIN. WITH 4.3 dB gain

DESCRIPTION

The SD1414-12 is a 13.5 V Class C Epitaxial

silicon NPN planar transistor designed for

amplifier applications up to 960 MHz.

Internal input matching and common base

configuration assure optimum gain and efficiency

in broad band applications.

.230 6LFL (M142)

epoxy sealed

ORDER CODE

BRANDING

SD1414-12

SD1414-12

PIN CONNECTION

1. Collector

2. Emitter

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25

o

C)

Symbol

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

DI SS

T

j

T

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Max. O perating Junction Temperature

Storage T emperature

Value

36

18

36

4.0

9.0

150

+200

-65 to 150

3. Base

Uni t

V

V

V

V

A

W

o

o

C

C

THERMAL DATA

R

th (j-c)

Junction-Case Thermal Resistance

1.2

o

C/W

December 1999

1/6

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