鈥?/div>
DESIGNED FOR VHF MILITARY AND COMMERCIAL
EQUIPMENT
4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN
GROUNDED EMITTER CONFIGURATION
DESCRIPTION:
THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR
ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A
BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED
EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25潞C)
Symbol
P
DISS
Parameter
Total Power Dissipation *
Value
8.0
36
18
0.64
-65 to 200
200
Unit
W
V
V
A
V
CBO
Collector-base Voltage
V
CEO
Collector-emitter Voltage (I
B
=0)
I
C
Collector Current *
T
STG
Storage Temperature
T
J
Junction Temperature
*At RF Conditions
潞
C
潞
C
Thermal Data
R
TH(J-C)
)
Thermal Resistance Junction-case
21.9
擄
C/W
MSC0936.PDF 10-15-98