SD1070
RF & MICROWAVE TRANSISTORS
RF PRODUCTS
DIVISION
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W .
Microsemi
.COM
This silicon epitaxial NPN planar high frequency transistor employs a
multi emitter electrode design. This feature together with a heavily diffused
base matrix located between the individual emitters results in high RF
current handling capability, high power gain, low base resistance and low
output capacitance. These transistors are intended for Class A, B, or C
amplifier, oscillator or frequency multiplier circuits and are specifically
designed for operation in the VHF-UHF region.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
!
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130 - 400 MHz
28 Volts
High Power Gain
High Efficiency
Common Emitter
P
OUT
= 13.5 W Min. @
175 MHz
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
!
VHF - UHF Applications
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
65
40
4.0
3.0
23.0
+200
-65 to +150
Unit
V
V
V
A
W
擄C
擄C
PIN CONNECTION
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
7.6
擄C/W
1
2
3
SD1070
SD1070
1. Emitter
2. Base
3. Collector
Copyright
錚?/div>
2000
MSC1642.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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