Ordering number:EN544G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power Amp,
100W Output Predriver Applications
Package Dimensions
unit:mm
2010C
[2SA1011/2SC2344]
( ) : 2SA1011
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
JEDEC : TO-220AB
EIAJ : TO-SC-46
1 : Base
2 : Collector
3 : Emitter
Ratings
(鈥?180
(鈥?160
(鈥?6
(鈥?1.5
(鈥?3
Unit
V
V
V
A
A
W
Tc=25藲C
25
150
鈥?5 to +150
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VBE
VCE(sat)
VCB=(鈥?120V, IE=0
VEB=(鈥?4V, IC=0
VCE=(鈥?5V, IC=(鈥?300mA
VCE=(鈥?10V, IC=(鈥?50mA
VCB=(鈥?10V, f=1MHz
VCE=(鈥?5V, IC=(鈥?10mA
IC=(鈥?500mA, IB=(鈥?50mA
(鈥?180
(鈥?160
(鈥?6
(0.29)
0.15
(0.19)
0.48
(0.48)
0.81
60*
100
(30)
23
(鈥?1.5
(鈥?.5)
0.3
V(BR)CBO IC=(鈥?1mA, IE=0
V(BR)CEO IC=(鈥?1mA, RBE=鈭?/div>
V(BR)EBO IE=(鈥?10mA, IC=0
ton
tf
tstg
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Conditions
Ratings
min
typ
max
(鈥?10
(鈥?10
200*
MHz
pF
pF
V
V
V
V
V
V
碌s
碌s
碌s
Unit
碌A(chǔ)
碌A(chǔ)
* : The 2SA1011/2SC2344 are classified by 300mA h
FE
as follows :
60
D
120
100
E
200
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/3
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