Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
1.2 @ V
GS
= 鈥?.5 V
鈥?0
1.6 @ V
GS
= 鈥?.5 V
2.7 @ V
GS
= 鈥?.8 V
I
D
(mA)
鈥?50
鈥?00
鈥?50
FEATURES
D
D
D
D
D
D
High-Side Switching
Low On-Resistance: 1.2
W
Low Threshold: 0.8 V (typ)
Fast Swtiching Speed: 14 ns
1.8-V Operation
Gate-Source ESD Protection
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D
Battery Operated Systems
D
Power Supply Converter Circuits
D
Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G
1
Ordering Information:
SC-75A (SOT鈥?416):
Si1013R鈥揗arking Code : D
SC-89 (SOT鈥?490):
Si1013X鈥揗arking Code: B
Top View
3
D
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
_
Pulsed Drain Current
a
Continuous Source Current (diode conduction)
b
Maximum Power Dissipation
b
for SC-75
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
T
J
, T
stg
ESD
P
D
T
A
= 25_C
T
A
= 85_C
I
D
I
DM
I
S
鈥?75
175
90
275
160
鈥?5 to 150
2000
Symbol
V
DS
V
GS
5 secs
Steady State
鈥?0
"6
Unit
V
鈥?00
鈥?00
鈥?000
鈥?50
鈥?75
mA
鈥?50
150
80
250
140
_C
V
mW
Maximum Power Dissipation
b
for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Document Number: 71167
S-02464鈥擱ev. A, 25-Oct-00
www.vishay.com
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