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SBYV26C Datasheet

  • SBYV26C

  • Glass Passivated Ultrafast Rectifier

  • 2頁(yè)

  • VISHAY   VISHAY

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SBYV26C
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
600V
Forward Current
1.0A
Glass Passivated Ultrafast Rectifier
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High temperature metallurgically bonded construction
Cavity-free glass passivated junction
Ultrafast recovery time for high efficiency
Low forward voltage, high current capability
Capable of meeting environmental standards of
MIL-S-19500
Hermetically sealed package
Low leakage current 鈥?High surge current capability
Specified reverse surge capability
High temperature soldering guaranteed: 350擄C/10 seconds,
0.375" (9.5mm) lead length,5 lbs. (2.3kg) tension
*
Glass-plastic
0.205 (5.2)
0.160 (4.1)
ed*
ent
Pat
Dimensions in inches
and (millimeters)
0.034 (0.86)
0.028 (0.71)
DIA.
encapsulation
technique is
covered by
Patent No.
3,996,602, and
brazed-lead
assembly by
Patent No.
3,930,306
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Mechanical Data
Case:
JEDEC DO-204AL, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
A
1.0 (25.4)
MIN.
Maximum Ratings and Thermal Characteristics
(T
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
= 85擄C
(See Fig. 1)
Peak forward surge current 10ms single half
sine-wave superimposed on rated load
Non repetitive peak reverse energy
Typical thermal resistance
(Note 2,3)
(Note 1)
= 25擄C unless otherwise noted)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM
R
螛JA
R
螛JL
T
J
, T
STG
Value
600
420
600
1.0
30
5
70
16
鈥?5 to +175
Unit
V
V
V
A
A
mJ
擄C/W
擄C
Operating junction and storage temperature range
Electrical Characteristics
Maximum instantaneous
forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
(T
A
= 25擄C unless otherwise noted)
Minimum avalanche breakdown voltage at 100碌A(chǔ)
T
J
= 25擄C
T
J
= 175擄C
T
A
= 25擄C
T
A
= 165擄C
V
BR
V
F
I
R
t
rr
C
J
di
r
/dt
600
2.5
1.3
5.0
150
30
45
7
V
V
碌A(chǔ)
ns
pF
A/碌s
Max. reverse recovery time at I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Maximum junction capacitance at 4.0V, 1MHz
Maximum reverse recovery current slope
at I
F
= 1A, V
R
= 30V, di
f
/dt = 鈥?A/碌s
Notes:
(1) Peak reverse energy measured with 8/20碌s surge
(2) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5鈥?(12 x 12mm) copper pads
(3) Thermal resistance from junction to lead at 0.375鈥?(9.5mm) lead length with both leads attached to heatsink
Document Number 88735
11-Feb-02
www.vishay.com
1

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