SBR20A40CTF-prel
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Values
Characteristics
I
F(AV)
Rectangular Waveform
V
RRM
V
F
@
10A, Tj=125 C
Tj
(operating/storage)
o
Units
A
V
V, typ
o
20
40
0.41
-65 to 175
C
Anode
ELECTRICAL:
*
Ultra Low Forward Voltage Drop
*
High Thermal SBR Reliability
*
Reliable High Temperature Operation
*
Super Barrier Design
*
Softest, fast switching capability
o
* 175
C
Operating Junction Temperature
1
Common
Cathode
2
3
Anode
Device optimized for low forward voltage drop
to maximize efficiency in Power Supply applications
MECHANICAL:
*
Molded Plastic ITO-220 package
Maximum Ratings and Electrical Characteristics
o
(at 25
C
unless otherwise specified)
SYMBOL
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current
(Rated V
R
-20Khz Square Wave)-50% duty cycle
Peak Forward Surge Current - 1/2 60hz
Peak Repetitive Reverse Surge Current
(2uS-2Khz)
Instantaneous Forward Voltage (per leg)
I
F
= 10A; T
J
= 25
O
C
I
F
= 20A; T
J
= 25
O
C
I
F
= 10A; T
J
= 125
o
C
Maximum Reverse Current at Rated V
RM
T
J
= 25
O
C
T
J
= 125
O
C
Maximum Rate of Voltage Change (at Rated V
R
)
Maximum Thermal Resistance JC
Operating and Storage Junction Temperature
NOTE: Dice are available for customer applications.
* Pulse width < 300 uS, Duty cycle < 2%
V
RM
V
RWM
V
RRM
V
R(RMS)
I
O
I
FSM
I
RRM
Typ
0.44
0.56
0.41
Typ
.22
20
10,000
2
-65 to +175
40
40
20
180
3
Max
0.48
0.60
0.45
Max
1
100
UNITS
Volts
Volts
Amps
Amps
Amps
V
F
Volts
I
*
R
mA
mA
V/uS
O
dv/dt
R胃
JC
T
J
C/W
O
C
___________________________________________________________________________________________________
www.apdsemi.com
5/3/05
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