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SBP13009 Datasheet

  • SBP13009

  • High Voltage Fast-Switching NPN Power Transistor

  • 6頁(yè)

  • ETC

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SemiWell
Semiconductor
SBP13009
High Voltage Fast-Switching NPN Power Transistor
Features
-
Very High Switching Speed (Typical 40ns@8.0A)
-
Minimum Lot-to-Lot hFE Variation
-
Low VCE(sat) (Typical 320mV@8.0A/1.6A)
-
Wide Reverse Bias S.O.A
Symbol
鈼?/div>
2.Collector
1.Base
鈼?/div>
鈼?/div>
3.Emitter
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
錛?/div>
10 ms
)
Base Current
Base Peak Current ( t
P
錛?/div>
10 ms
)
Total Dissipation at T
C
= 25 擄C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
12
25
6.0
12
100
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
擄C
擄C
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
1.25
40
Units
擄C/W
擄C/W
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
1/6

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