Ordering number:EN3868
SB30-03P
Sillicon Epitaxial Schottky Barrier Diode
30V, 3A Rectifier
Applications
路 High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1244
[SB30-03P]
Features
路 Low forward voltage (VF max=0.55V).
路 Fast reverse recovery time (trr max=30ns).
路 Low switching noise.
路 Low leakage current and high reliability due to
highly reliable planar structure.
A:Anode
C:Cathode
SANYO:PCP
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
35
3
10
鈥?5 to +125
鈥?5 to +125
Unit
V
V
A
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rthj-a (1)
Rthj-a (2)
Mounted on
250mm
2
脳0.8mm
ceramic board
Conditons
IR=1mA
IF=3A
VR=15V
VR=10V, f=1MHz
IF=IR=300mA, See sepcified Test Circuit
Ratings
min
30
0.55
200
160
30
280
100
typ
max
Unit
V
V
碌A(chǔ)
pF
ns
藲C/W
藲C/W
Marking:SG
trr Test Circuit
Unit (resistance:鈩?
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/D151MH (KOTO) No.3868-1/2
1
2
