SB29003 High Voltage Transistor
SB29003
High Voltage Transistor
1
SOT-223
3.Emitter
Marking: 5463003
1.Base
2.Collector
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25擄C unless otherwise noted
Parameter
Value
500
400
6
300
2
150
-55 ~ 150
Units
V
V
V
mA
W
擄C
擄C
Collector Dissipation (T
C
= 25擄C)
Junction Temperature
Storage Temperature
T
C
= 25擄C unless otherwise noted
Electrical Characteristics
Symbol
BV
CBO
BV
CER
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
Conditions
I
C
= 100碌A(chǔ), I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 400V, I
E
= 0
V
CE
= 400V, I
B
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
I
C
= 1mA, I
B
= 0.1mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 20V, I
E
= 0, f = 1MHz
Min.
500
400
6
Max
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
0.1
0.5
0.1
40
50
45
40
200
V
CE(sat)
Collector-Emitter Saturation Voltage *
0.4
0.5
0.75
0.75
7
V
V
V
V
pF
V
BE(sat)
C
ob
Base-Emitter Saturation Voltage *
Output Capatitance
* Pulse Test: PW
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%
漏2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
SB29003 Rev. A
1
2
3
4
