Ordering number :EN1924B
SB02-09NP
Shottky Barrier Diode
90V, 200mA Rectifier
Applications
路 High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1157A
[SB02-09NP]
Features
路 Low forward voltage (VF max=0.7V).
路 Fast reverse recorvery time (trr max=10ns).
路 Low switching noise.
路 Low leakage current and high reliability due to
highly reliable planar structure.
JEDEC:TO-92
EIAJ:SC-43
SANYO:NP
1:Anode
2:Cathode
3:No Contact
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
90
95
Unit
V
V
mA
A
50Hz, resistive load, Ta=88藲C
50Hz sine wave, 1cycle
200
5
鈥?5 to +125
鈥?5 to +125
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recorvery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rthj-a
IR=200碌A(chǔ)
IF=200mA
VR=45V
VR=鈥?0V, f=1MHz
IF=IR=10mA, See specified Test Circuit
165
11
10
Conditions
Ratings
min
90
0.7
50
typ
max
Unit
V
V
碌A(chǔ)
pF
ns
藲C/W
ttr Test Circuit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/41096GI (KOTO)/2079MO/O255KI, TS No.1924-1/2
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