Ordering number :EN1931B
SB01-15NP
Shottky Barrier Diode
150V, 100mA Rectifier
Applications
路 High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1157A
[SB01-15NP]
Features
路 Low forward voltage (VF max=0.75V).
路 Fast reverse recorvery time (trr max=10ns).
路 Low switching noise.
路 Low leakage current and high reliability due to
highly reliable planar structure.
JEDEC:TO-92
EIAJ:SC-43
SANYO:NP
1:Anode
2:Cathode
3:No Contact
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
150
155
Unit
V
V
mA
A
50Hz, resistive load, Ta=93藲C
50Hz sine wave, 1cycle
100
5
鈥?5 to +125
鈥?5 to +125
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recorvery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rthj-a
IR=200碌A
IF=100mA
VR=75V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
165
8
10
Conditions
Ratings
min
150
0.75
50
typ
max
Unit
V
V
碌A
pF
ns
藲C/W
trr Test Circuit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/41096GI (KOTO)/O255KI, TS No.1931-1/2