鈥?/div>
Low forward voltage (VF max=0.75V).
Fast reverse recorvery time (trr max=10ns).
Low switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
150
155
100
5
--55 to +125
--55 to +125
Unit
V
V
mA
A
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rthj-a(1)
Rthj-a(2)
IR=200碌A(chǔ)
IF=100mA
VR=75V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on Cu-foild area of 16mm
!0.2mm
t
2
Conditions
Ratings
min
150
0.75
50
7
10
420
typ
max
Unit
V
V
碌A(chǔ)
pF
ns
擄C
/ W
擄C
/ W
on glass epoxy board
330
Marking : F
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504 TS IM TB-00000591 / 33098 HA (KT) / 4289MO / O255KI, TS No.1929-1/3
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