LNA Mixer integration.
Typical conversion gain of 7 dB.
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50 dBm.
LO Drive-Level: +13 dBm.
Surface Mount QSOP16 Package.
Low Cost/High Performance.
50 ohm Nominal Impedance.
Description
M/A-COM鈥檚 SA65-0003 is an integrated assembly contain-
ing a GaAs FET MMIC LNA and GaAs FET mixer. This
device is packaged in a 16-leaded QSOP plastic surface
mount package. The amplifier can be biased with either
+3V or +5V, the mixer requires no DC bias. The conversion
gain of the integrated combination is typically 6 dB at +3V
bias and 8 dB at +5V bias. The SA65-0003 is ideally
suited for RF/IF communications applications requiring
down conversion with some gain.
This MCM contains a mixer that is fabricated using a
mature 1-micron GaAs process, it also contains an
LNA
that is fabricated using a low cost mature 0.5-micron gate
length GaAs MESFET process. Both die feature full
passivation for increased performance and reliability.
Recommended PCB Layout
Functional Block Diagram