SS9015
SS9015
Low Frequency, Low Noise Amplifier
鈥?Complement to SS9014
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-50
-45
-5
-100
450
150
-55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100碌A(chǔ), I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -5V, I
C
= -1mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -0.2mA
f=1KHz, R
S
=1K鈩?/div>
100
-0.6
60
200
-0.2
-0.82
-0.65
4.5
190
0.7
10
Min.
-50
-45
-5
-50
-50
600
-0.7
-1.0
-0.75
7.0
V
V
pF
MHz
dB
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE
A
60 ~ 150
B
100 ~ 300
C
200 ~ 600
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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