SS9014
SS9014
Pre-Amplifier, Low Level & Low Noise
鈥?High total power dissipation. (P
T
=450mW)
鈥?High h
FE
and good linearity
鈥?Complementary to SS9015
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
50
45
5
100
450
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=1mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=0.2mA
f=1KHz, R
S
=2K鈩?/div>
150
0.58
60
280
0.14
0.84
0.63
2.2
270
0.9
10
Min.
50
45
5
50
50
1000
0.3
1.0
0.7
3.5
V
V
pF
MHz
dB
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE
A
60 ~ 150
B
100 ~ 300
C
200 ~ 600
D
400 ~ 1000
漏2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
1
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