S868T
Vishay
Semiconductors
BIPMIC
廬
鈥?Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose 50 gain block for narrow and broad
band IF and RF amplifiers in commercial and industrial
applications. The 50 level allows directly to cascade
W
W
this amplifier with minimal external circuitry, thus pro-
viding a simple, cost effective way to achieve high level
amplification.
Features
D
D
D
D
Broadband amplification
50
W
cascadable gain block
High gain (19 dB @900 MHz)
Low noise figure (2.9 db @900 Mhz)
D
High output level
D
Low cost surface mount plastic package
D
Few external components
2
1
94 9279
13 579
3
4
S868T Marking: 868
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Device current
RF input power
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
I
bias
P
in
P
tot
T
j
T
stg
Value
55
20
275
150
鈥?5 to +150
Unit
mA
dBm
mW
擄
C
擄
C
T
amb
鈮?/div>
25
擄
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Symbol
R
thJA
Value
450
Unit
K/W
m
Document Number 85056
Rev. 3, 20-Jan-99
www.vishay.com
1 (3)
1
2
3
