S852T/S852TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
D
Low supply voltage
D
Low current consumption
D
50
W
input impedance at 945 MHz
1
D
Low noise figure
D
High power gain
1
13 581
94 9280
13 652
13 570
2
3
2
3
S852T Marking: 852
1 = Collector, 2 = Base, 3 = Emitter
S852TW Marking: W52
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
12
6
2
8
30
150
鈥?5 to +150
Unit
V
V
V
mA
mW
擄
C
擄
C
T
amb
鈮?/div>
125
擄
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
Document Number 85052
Rev. 3, 20-Jan-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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