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S6A13 Datasheet

  • S6A13

  • TOSHIBA Thyristor Silicon Planar Type

  • 4頁

  • TOSHIBA

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S6A13
TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
Unit: mm
FWD included between cathode and anode
Critical rate of rise of ON-state current: di/dt = 750 A/碌s
Repetitive peak surge ON-state current: I
TRM
= 500 A (t
w
= 2 碌s)
Repetitive peak OFF-state voltage: V
DRM
= 800 V
Gate trigger current: I
GT
= 30 mA max.
路
路
路
路
路
Maximum Ratings
Characteristics
Repetitive peak OFF-state voltage
Repetitive peak surge ON-state
current
(Note)
Repetitive peak surge forward current
(Note)
Critical rate of rise of ON-state current
(Note)
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
Symbol
V
DRM
I
TRM
I
FRM
Rating
800
500
500
Unit
V
A
A
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
750
5
0.5
10
-5
2
-40~125
-40~150
A/ms
W
W
V
V
A
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
13-10J1B
Weight: 1.5 g (typ.)
Note: V
D
<
0.8
麓
rated, Tc
=
85擄C, i
gp
>
60 mA, t
gw
>
10
m
s, t
gr
<
150 ns
=
=
=
=
Marking
鈥?
鈥?
鈥?
MARK
S6A13
TYPE NAME
S6A13
鈥?
Lot Number
Month (starting from alphabet A)
Year (last decimal digit of the current year)
1
2002-01-23

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  • 英文版
    TOSHIBA Thyristor Silicon Planar Type
    TOSHIBA
  • 英文版
    TOSHIBA Thyristor Silicon Planar Type
    TOSHIBA [T...

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