PHOTODIODE
16-element Si photodiode array
S5668 series
Photodiode array ideal for light detection in a long, narrow area
S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm (width) 脳 2.0 mm (height) and is arrayed
at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC board. By linearly arranging two or more
pieces of S5668 series, a long and narrow photodiode array can be easily configured at the same element pitch. For X-ray detection applications,
S5668-11 with a CsI (Tl) scintillator and S5668-34 with a ceramic scintillator are also available.
Features
Applications
l
Active area: 1.175 脳 2.0 mm per element
l
Element pitch: 1.575 mm
l
Mounted on a 1-inch (25.4 mm) long PC board
l
Long and narrow format by multiple arrays
l
High-speed response (S5668-02)
l
Low capacitance (S5668-05)
l
X-ray baggage inspection
l
Multichannel spectrophotometry
l
Optical position detection
s
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
10
-20 to +60
-20 to +80
Unit
V
擄C
擄C
s
Electrical and optical characteristics (Ta=25 擄C, per 1 element)
Parameter
Spectral response range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Rise time
Terminal capacitance
Noise equivalent power
Symbol
位
位p
S
I
D
tr
Ct
NEP
Condition
S5668-01
Typ.
Max.
320 to 1100
-
960
0.31
位=540
nm
0.56
位=位p
V
R
=10 mV
1
V
R
=0 V
0.7
R
L
=1 k鈩?/div>
10 to 90 %
V
R
=0 V
300
f=10 kHz
V
R
=0 V
-15
4.1
脳
10
nm
位=540
-
-
-
10
-
550
-
S5668-02
Typ.
Max.
320 to 1100
-
960
0.31
0.58
5
0.1
30
9.3
脳
10
-15
S5668-05
Typ.
Max.
320 to 1060
-
920
0.31
0.56
10
0.1
20
1.3
脳
10
-14
Unit
nm
nm
A/W
pA
碌s
pF
W/Hz
1/2
-
-
-
30
-
40
-
-
-
-
50
-
30
-
1
1
2
