S525T
Vishay Telefunken
N鈥揅hannel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
D
Integrated gate protection diodes
D
Low feedback capacitance
D
Low noise figure
1
G
13 581
94 9280
D
2
3
12624
S525T Marking: LB
Plastic case (SOT 23)
1=Source, 2=Gate , 3=Drain
S
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate-source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
V
DS
I
D
鹵I
GSM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
鈥?5 to +150
Unit
V
mA
mA
mW
擄
C
擄
C
T
amb
鈮?/div>
60
擄
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Document Number 85045
Rev. 3, 20-Jan-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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