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S4NAD80 Datasheet

  • S4NAD80

  • Twin Diode

  • 2頁

  • SHINDENGEN   SHINDENGEN

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銉勩偆銉熾儉銈ゃ偑銉箋儔
Twin Diode
闈㈠疅瑁呫儑銉愩偆銈光€冦偄銉偆鍨?/div>
Surface Mounting Device Diode Array
鈻犲錕?frac12;錕藉娉曞洺鈥僌UTLINE
DIMENSIONS
Package錛?NA
Unit : mm
Weight錛?.29g
錛坱yp.錛?/div>
錛?.5錛?/div>
錛?.2錛?/div>
錛?.7錛?/div>
0.25
鹵0.1
1.0
鹵0.2
1.0
鹵0.2
6.5
鹵0.2
10
鹵0.3
2.6
鹵0.2
S1NAD80
800V 3A
鐗歸暦
鈼忓皬鍨嬮潰瀹熻
鈼忋儎銈ゃ兂
鈼忚€愭箍鎬с伀鍎倢楂樹俊闋?/div>
鈼忚嚜鍕曞疅瑁呭蹇?/div>
鍝佸悕鐣ュ彿
Type No.
妤墊€ц鍙?/div>
Terminal direction
鈶?/div>
鈶?/div>
銈儵銈?/div>
Class
鈶?鈶?/div>
A K
AD 80
014N
鈶?鈶?/div>
鈶?/div>
3.4
鹵0.2
綆＄悊鐣彿
錛堜緥錛?/div>
Control No.
5.08
鹵0.2
6.8
鹵0.2
鈶?/div>
0.9
鹵0.15
銉儍銉堣鍙?/div>
錛堜緥錛?/div>
錛?.1錛?/div>
Date code
錕?frac12;銉儉銉箋儶銉熾偘銉戙儍銉夈伄鍙傝€冦儜銈褲兗銉?/div>
Standard soldering pad
C0.8
2.5
鹵0.1
0.15
Feature
鈼廠mall SMD
鈼廡win-Di
鈼廐igh-Reliability
鈼廸or Auto-Mount
錛堬拷½鍝佷笂銇〃紺恒伀銇ゃ亜銇︺伅銆佹嵑鍗頒粫妲樸倰銇旂⒑瑾嶃亸銇犮仌銇勶級(jí)
鈻犲畾鏍艱〃
RATINGS
闋?鐩?/div>
Item
璦樺彿
鏉?浠?/div>
Symbol Conditions
T
stg
T
j
V
RM
I
O
I
FSM
I
t
2
鈼忕刀瀵炬渶澶у畾鏍?/div>
Absolute Maximum Ratings錛?/div>
鎸囧畾銇仾銇勫牬鍚堛伅
Tl = 25鈩冿紡
unless otherwise specified
錛?/div>
鍝?鍚?/div>
Type No.
鈥?/div>
0.1
鹵0.1
S1NAD80
鈭?5鈭?50
150
800
鍗橈拷½錕?/div>
Unit
鈩?/div>
鈩?/div>
V
A
A
A
2
s
淇濆瓨娓╁害
Storage Temperature
鎺ュ悎閮ㄦ俯搴?/div>
Operation Junction Temperature
銇涖倱闋€嗛浕鍦?/div>
Maximum Reverse Voltage
鍑哄姏闆繪祦
Average Rectified Forward Current
銇涖倱闋偟銉箋偢闋嗛浕嫻?/div>
Peak Surge Forward Current
闆繪祦浜屼箺鏅傞枔絀?/div>
Current Squared Time
50Hz 姝ｅ雞娉紝鎶墊姉璨犺嵎錛屻儣銉兂銉堝熀鏉垮疅瑁咃紝
50Hz sine wave, Resistance load,
On glass-epoxy substrate,
Tl=102鈩?/div>
Ta=31鈩?/div>
3
1.5
110
60
50Hz 姝ｅ雞娉紝闈炵拱銈婅繑銇?銈點(diǎn)偆銈儷銇涖倱闋€わ紝Tj=25鈩?/div>
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25鈩?/div>
1ms 鈮?t 錛?10ms鈥僒j=25鈩?/div>
鈼忛浕姘楃殑銉?nèi)潌辩殑鐗规€р€僂lectrical
Characteristics錛?/div>
鎸囧畾銇仾銇勫牬鍚堛伅
Tl = 25鈩冿紡
unless otherwise specified
錛?/div>
闋嗛浕鍦?/div>
Forward Voltage
閫嗛浕嫻?/div>
Reverse Current
鐔辨姷鎶?/div>
Thermal Resistance
V
F
I
R
胃jl
胃ja
2
I
F=
0.75A,
V
R =
800V,
銉戙儷銈規(guī)脯瀹氾紝涓€绱犲瓙錕?frac12;錕姐仧銈娿伄瑕忔牸鍊?/div>
Pulse measurement, per diode
銉戙儷銈規(guī)脯瀹氾紝涓€绱犲瓙錕?frac12;錕姐仧銈娿伄瑕忔牸鍊?/div>
Pulse measurement, per diode
MAX
MAX
MAX
MAX
1.05
10
15
84
V
渭A
鈩?W
鎺ュ悎閮ㄣ兓銉兗銉夐枔錛屻儣銉兂銉堝熀鏉垮疅瑁?/div>
Junction to Lead, On glass-epoxy substrate
鎺ュ悎閮ㄣ兓鍛ㄥ洸闁擄紝銉椼儶銉熾儓鍩烘澘瀹熻
1
Junction to Ambient, On glass-epoxy substrate
*
*
1錛氶妳綆斻儜銈褲兗銉?01mm
Area
鈥?/div>
Copper soldering pad
101mm
2
162
錛圝
514 - 6錛?/div>
www.shindengen.co.jp/product/semi/

S4NAD80相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Twin Diode
    SHINDENGEN

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