PHOTODIODE
Si PIN photodiode
S4707-01
Si PIN photodiode for general photometry
Features
Applications
l
Clear plastic package: 4.5 脳 5.5 mm
l
4-pin DIP type
l
Active area: 2.4 脳 2.8 mm
l
Optical switch, etc.
s
Absolute maximum ratings (Ta=25
擄C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
20
-25 to +85
-40 to +100
Unit
V
擄C
擄C
s
Electrical and optical characteristics (Ta=25
擄C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Cut-off frequency
Terminal capacitance
Symbol
位
位p
S
Isc
I
D
fc
Ct
Condition
Min.
-
-
0.5
-
-
-
-
Typ.
320 to 1100
960
0.6
6.6
0.08
20
14
Max.
-
-
-
-
5
-
30
Unit
nm
nm
A/W
碌A(chǔ)
nA
MHz
pF
位=位p
100
lx,
2856 K
V
R
=10 V
V
R
=10 V, R
L
=50
鈩?/div>
-3 dB,
位=780
nm
V
R
=10 V, f=1 MHz
1
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