PHOTODIODE
76-element Si photodiode array
S3954
High UV sensitivity photodiode array mounted in DIP
Features
Applications
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High UV sensitivity: QE 75 % (位=200 nm)
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Half pitch 78-lead DIP
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Element size: 3.175 脳 0.3175 mm
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Entire active area: 3.175 脳 25.6875 mm
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Element pitch: 0.3425 mm
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Spectrophotometers
s
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
5
-20 to +60
-20 to +80
Unit
V
擄C
擄C
s
Electrical and optical characteristics (Ta=25
擄C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Temperature coefficient of
dark current
Rise time
Terminal capacitance
Noise equivalent power
Symbol
位
位p
S
I
D
T
CID
tr
Ct
NEP
V
R
=0 V, R
L
=1 k鈩?/div>
位=655
nm
per 1 element
V
R
=0 V, f=10 kHz
V
R
=0 V,
位=位p
Condition
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
190 to 1100
960
0.10
0.43
0.58
0.1
1.12
0.4
150
7.0 脳 10
-16
Max.
-
-
-
-
-
30
-
-
-
-
Unit
nm
nm
A/W
pA
times/擄C
碌s
pF
W/Hz
1/2
位=200
nm
位=633
nm
位=位p
per 1 element
V
R
=10 mV
1
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