IMAGE SENSOR
NMOS linear image sensor
S3901-FX series
Image sensor highly sensitive to X-rays from 10 k to 100 keV
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area,
high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer
excellent output linearity and wide dynamic range.
S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the
light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to
X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd
2
O
2
S 路 Tb) whose composition is carefully selected to
provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength.
The S3901-FX series active area consists of a photodiode array with pixels formed at 50 碌m pitches and a height of 2.5 mm. The number of pixels
can be selected from 256 or 512.
Hamamatsu S3902/S3903/S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor
material as S3901-FX series.
Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.
Features
Applications
l
Wide active area
Pixel pitch: 50 碌m
Pixel height: 2.5 mm
l
Low dark current and high saturation charge allow a
long integration time and a wide dynamic range at room
temperature
l
Excellent output linearity and sensitivity spatial uniformity
l
Low power consumption: 1 mW Max.
l
Start pulse and clock pulse are CMOS logic compatible
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Test equipment using X-ray and electron beam transmission
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X-ray non-destructive inspection
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X-ray and electron beam detector
Figure 1 Equivalent circuit
START
CLOCK
CLOCK
st
1
2
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
END OF SCAN
Figure 2 Active area structure
ACTIVE
PHOTODIODE
ACTIVE VIDEO
Vss
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
OXIDATION SILICON
KMPDC0020EA
45 碌m
50 碌m
DUMMY VIDEO
PHOSPHOR MATERIAL
FIBER OPTIC PLATE
1.0 碌m
1.0 碌m
KMPDC0008EA
2.5 mm
N TYPE SILICON
P TYPE SILICON
s
Absolute maximum ratings
Parameter
Input pulse (蠁1,
蠁2, 蠁st)
voltage
Power consumption *
1
Operating temperature *
2
Storage temperature
Symbol
V蠁
P
Topr
Tstg
Value
15
1
-30 to +60
-40 to +80
Unit
V
mW
擄C
擄C
*1: V蠁=5.0 V
*2: No condensation
400 碌m
1
2
3
