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S3204 Datasheet

  • S3204

  • Si PIN photodiode Large area sensors for scintillation detec...

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PHOTODIODE
Si PIN photodiode
S3204/S3584 series
Large area sensors for scintillation detection
S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window.
Features
Applications
l
Higher sensitivity and low dark current than conventional type
l
Sensitivity matching with BGO and CsI (TI) scintillators
l
High quantum efficiency QE=85 % (位=540 nm)
l
Low capacitance
l
High-speed response
l
High stability
l
Good energy resolution
l
Scintillation detectors
l
Calorimeters
l
Hodoscopes
l
TOF counters
l
Air shower counters
l
Particle detectors, etc.
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline
Window
material
Epoxy resin
Window-less
Epoxy resin
Window-less
Epoxy resin
Window-less
Epoxy resin
Window-less
Active
area
(mm)
S3204-05
S3204-06
S3204-08
S3204-09
S3584-05
S3584-06
S3584-08
S3584-09
鉃€
18 脳 18
0.3
0.5
28 脳 28
0.3
100
100
100
150
-20 to +60
-20 to +80
Depletion
layer
thickness
(mm)
0.5
Reverse
voltage
V
R
Max.
150
Absolute maximum ratings
Power
Operating
dissipation temperature
P
Topr
(mW)
(擄C)
Storage
temperature
Tstg
(擄C)
鉃?/div>
s
Electrical and optical characteristics (Typ. Ta=25 擄C, unless otherwise noted)
S p ectral
response
range
(nm)
S3204-05
320 to 1120
S3204-06
S3204-08
320 to 1100
S3204-09
S3584-05
320 to 1120
S3584-06
S3584-08
320 to 1100
S3584-09
*1: V
R
=70 V
Peak
sensitivity
wavelength
位p
(nm)
980
960
980
960
Photo sensitivity
S
LSO
420 nm
(A/W) (A/W)
0.62
0.19
0.64
0.23
0.66
0.20
0.66
0.22
0.62
0.19
0.64
0.23
0.66
0.20
0.66
0.22
位=位p
BGO
CsI(Tl)
480 nm 540 nm
(A/W)
(A/W)
0.25
0.3
0.32
0.39
0.3
0.36
0.33
0.41
0.25
0.3
0.32
0.39
0.3
0.36
0.33
0.41
Dark
S h ort
Cut-off
circuit current Temp. Frequency
I
D
current
fc
coefficient
V
R
= 10 0 V
V
R
= 10 0 V
Isc
of I
D
100
lx
Typ. Max. T
CID
-3 dB
(碌A)
310
340
740
780
(nA) (nA) (tim es/擄 C) (MHz)
15
50
20
20 *
1.12
20 100
10 * 30 *
10
10 *
200
300 *
1.3 脳 10
-13
Type No.
Ter minal
capacitance
Ct
NEP
f= 1 M H z V
R
=100 V
V
R
=100 V
(pF)
80
130 *
(W/Hz
1/2
)
1.2 脳 10
-13
6 * 20 *
6.6 脳 10
鈥?14
*
8.6 脳 10
鈥?14
*
1

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