鈥?/div>
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
0.083 (2.108)
0.075 (1.905
)
2
1
0.155 (3.937)
0.130 (3.302)
0.220 (5.588)
0.200 (5.080)
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
0.096 (2.438)
0.083 (2.108)
0.050 (1.270)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
2.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
胃JA
T
stg
T
J
T
A
= 25擄C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 75擄C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
Value
2.0
Units
A
50
1.3
13
75
-65 to +150
-65 to +125
A
W
mW/擄C
擄C/W
擄C
擄C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Parameter
22
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current T
A
= 25擄C
(Note 1)
@ rated V
R
T
A
= 100擄C
Maximum Forward Voltage @ 2.0 A
Note:
Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%
T
A
= 25擄C unless otherwise noted
Device
23
30
21
30
24
40
28
40
25
50
35
50
0.4
10
700
26
60
42
60
28
80
56
80
29
90
64
90
210
100
80
100
20
14
20
Units
V
V
V
mA
mA
mV
500
850
漏1998
Fairchild Semiconductor Corporation
SS22-S210, Rev. A
1
2
3
