S175 - 50
175 Watts, 50 Volts, Class AB
Milcom 1.5 - 30
MHz
GENERAL DESCRIPTION
The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,
AB or C operation in the HF/VHF frequency bands. Its high collector voltage
simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
built using Gold Topside Metal, diffused emitter ballast resistors and silicon
nitride passivation, providing the user with the Highest MTTF available.
CASE OUTLINE
55HX, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
270 Watts
110 Volts
4.0 Volts
20 A
- 65 to +150
o
C
+200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 30 MHz
Vcc = 50 Volts
At Rated Power Out
MIN
175
3.5
17
17.5
65
30:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVebo
BVces
BVceo
Zin
ZI
Cob
h
FE
IMD
Emitter to Base Breakdown
Collector to Emitter
Breakdown
Collector to Emitter
Breakdown
Series Input Impedance
Series Load Impedance
Output Capacitance
DC - Current Gain
Intermodulation Distortion Lev.
Ie = 10 mA
Ic = 100 mA
Ie = 100 mA
At Rated Pout & Freq.
At Rated Pout & Freq.
Vcb = 50 V, Ie = 0
Vce = 5 V, Ic = 2 A
At Rated Pout
4
110
53
0.6-j0.4
4.6+2.1
180
10
-35
Volts
Volts
Volts
OHMS
OHMS
dBc
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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