S11MD4V/S11MD4T
S11MD4V/S11MD4T
s
Features
1. Pin No. 5 completely molded for external
noise resistance
(S11MD4T )
2. Dual-in-line package type
(S11MD4V)
3. Built-in zero-cross circuit
4. High repetitive peak OFF-state voltage
(V
DRM
: MIN. 400V )
5. Isolation voltage between input and output
V
iso
: 5 000V
rms
( S11MD4V/S11MD4T )
6. Recognized by UL, file No.E64380
g
S11MD4V
and
S11MD4T
are for 100V
lines.
Phototriac Coupler with
Built-in Zero-cross Circuit
s
Outline Dimensions
S11MD4V
2.54
鹵
0.25
6
5
4
6.5
鹵
0.5
( Unit : mm )
Internal connection
diagram
6
5
4
Zero-cross
circuit
1
2
3
1
2
3
4
Anode
Cathode
NC
Anode/
Cathode
5 No exter-
nal con-
nection
6 Anode/
Cathode
S11MD4V
1
Anode
mark
2
3
0.9
鹵
0.2
1.2
鹵0.3
7.12
鹵0.5
3.5
鹵
0.5
7.62
鹵0.3
3.35
鹵
0.5
s
Applications
1. For triggering medium/high power triacs
0.5
TYP.
3.7
鹵
0.5
0.26
鹵
0.1
胃
:
0 to 13
藲
0.5
鹵
0.1
胃
S11MD4T
6
S11MD4T
4
6.5
鹵
0.5
Internal connection
diagram
6
4
Zero-cross
circuit
1
2
3
1
2
3
4
Anode
Cathode
NC
Anode/
Cathode
6 Anode/
Cathode
2
1
Anode
mark
2.54
鹵
0.25
7.12
鹵
0.5
3
0.9
鹵
0.2
1.2
鹵
0.3
7.62
鹵
0.3
0.5
TYP.
3.5
鹵0.5
s
Absolute Maximum Ratings
Parameter
Forward current
Reverse voltage
RMS ON-state
current
鈭?
Peak one cycle
Output
surge current
Repetitive peak
OFF-state voltage
*2
Isolation voltage
Operating temperature
Storage temperature
鈭?
Soldering temperature
Input
( Ta = 25藲C )
3.35
鹵
0.5
Rating
Unit
Symbol
S11MD4V/S11MD4T
50
mA
I
F
6
V
V
R
I
T
I
surge
V
DRM
V
iso
T
opr
T
stg
T
sol
0.1
1.2
400
5 000
- 30 to +100
- 55 to +125
260
A
rms
A
V
V
rms
藲C
藲C
藲C
0.26
鹵
0.1
胃
:
0 to 13
藲
胃
3.7
鹵
0.5
0.5
鹵
0.1
鈭?
50Hz sine wave
鈭?
40 to 60% RH, AC for 1 minute,
f = 60Hz
鈭?
For 10 seconds
鈥?/div>
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.鈥?/div>
next
1
2
3
4
