SD5000
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
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PRELIMINARY DATA
GOLD METALLIZATION
EMITTER SITE BALLASTING
INTERNAL INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC PACKAGE
COMMON EMITTER CONFIGURATION
P
OUT
=
1.5 W MIN. WITH 9.5 dB GAIN
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
SD5000
BRANDING
S10A015
PIN CONNECTION
DESCRIPTION
The SD5000 is a NPN Silicon Transistor designed
for high gain linear performance at 1000 MHz.
This part uses gold metallized die and polysilicon
site ballasting to achieve high reliability and rug-
gedness.
The SD5000 can be used for applications such
as Telecommunications, Radar, ECM, Space and
other commercial and military systems.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
4. Emitter
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
50
50
3.5
1.0
7.0
+200
鈭?/div>
65 to +150
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
25
擄C/W
1/4
November 1992
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