S-AU81 Datasheet

IC型號(hào)：
S-AU81
PDF描述：
RF Power Amplifier Module
文件大小：
184.07KB
PDF頁數(shù)：
8頁
芯片廠家：
TOSHIBA

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S-AU81

RF Power Amplifier Module

S-AU81

Power Amplifier Modules for Domestic

cdmaOne

路

GaAs HBT Micro PA (on-chip bias circuit and

matching circuit)

Output power: P

= 27.0dBmW (min)

Gain: G

= 28.0dB (typ.)

Total current: I

(1) = 385 mA (typ.)

(@P

out

= 27.0dBmW)

Low-voltage operation: Operation at V

= 1.5 V is

possible

(2) = 97 mA (typ) (@P

out

= 14dBmW, V

= 1.5 V)

This device features an output control pin which

can be switched between low-power and high-power

settings.

= 90 mA (typ.) (@P

out

= 14dBmW, V

= 2.70 V)

Unit: mm

路

JEDEC

JEITA

TOSHIBA

Weight: 0.0 g (typ.)

鈥?/div>

5-6A

Maximum Ratings

(Ta

25擄C)

Characteristics

Supply voltage 1

Supply voltage 2

Control voltage

Collector current

Power dissipation

Operating temperature

Storage temperature range

Symbol

CC1

CC2

con

(Note 1)

stg

Rating

-20~+60

-30~+125

Unit

擄C

Note 1: Ta

25擄C

Marking

Pin No.1

Abbreviated product no.

U81

Monthly lot number

2001-11-06

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