S-AU81
RF Power Amplifier Module
S-AU81
Power Amplifier Modules for Domestic
cdmaOne
路
路
路
路
路
GaAs HBT Micro PA (on-chip bias circuit and
matching circuit)
Output power: P
o
= 27.0dBmW (min)
Gain: G
p
= 28.0dB (typ.)
Total current: I
t
(1) = 385 mA (typ.)
(@P
out
= 27.0dBmW)
Low-voltage operation: Operation at V
CC
= 1.5 V is
possible
I
t
(2) = 97 mA (typ) (@P
out
= 14dBmW, V
CC
= 1.5 V)
This device features an output control pin which
can be switched between low-power and high-power
settings.
I
t
= 90 mA (typ.) (@P
out
= 14dBmW, V
CC
= 2.70 V)
Unit: mm
路
JEDEC
JEITA
TOSHIBA
Weight: 0.0 g (typ.)
鈥?/div>
鈥?/div>
5-6A
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Supply voltage 1
Supply voltage 2
Control voltage
Collector current
Power dissipation
Operating temperature
Storage temperature range
Symbol
V
CC1
V
CC2
V
con
I
CC
P
D
(Note 1)
T
op
T
stg
Rating
5
5
4
1
2
-20~+60
-30~+125
Unit
V
V
V
A
W
擄C
擄C
Note 1: Ta
=
25擄C
Marking
Pin No.1
Abbreviated product no.
U81
Monthly lot number
1
2001-11-06
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