RTF025N03
Transistors
2.5V Drive Nch MOS FET
RTF025N03
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
TUMT3
0.85Max.
2.0
Features
1) Low On-resistance.
2) Space saving鈭抯mall surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
(1) Gate
0.3
(3)
0.2
0.77
1.7
0.2
(1)
(2)
2.1
0~0.1
0.65 0.65
1.3
0.17
Applications
Switching
(2) Source
(3) Drain
Abbreviated symbol : PL
Packaging specifications
Package
Type
RTF025N03
Code
Basic ordering unit (pieces)
Taping
TL
3000
Inner circuit
(3)
(1)
鈭?
鈭?
(2)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Gate
(2) Source
(3) Drain
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Mounted on a ceramic board
Symbol
V
DSS
V
GSS
I
D
I
DP
鈭?
I
S
I
SP
鈭?
P
D
鈭?
Tch
Tstg
Limits
30
12
鹵2.5
鹵10
0.6
10
0.8
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
Thermal resistance
Parameter
Channel to ambient
鈭?/div>
Mounted on a ceramic board
Symbol
Rth(ch-a)
鈭?/div>
Limits
156
Unit
擄C/W
0.15Max.
1/2
1
2
3
