鈶?/div>
0.2
Unit錛歮m
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
鈥籔NP
built in transistor of 鈥濓紞鈥漵ign is abbreviation.
0.65
0.13
0錕?frac12;錕?.1
鈶?/div>
RTr1
鈶?/div>
R1
R2
R2
鈶?/div>
R1
鈶?/div>
RTr2
鈶?/div>
TERMINAL
CONNECTOR
鈶狅細(xì)EMITTER1
鈶★細(xì)BASE1
鈶細(xì)COLLECTOR2
鈶ｏ細(xì)EMITTER2
鈶わ細(xì)BASE2
鈶?COLLECTOR1
JEITA錛歋C-88
0.9
0.65
鈶?/div>
MAXIMUM RATING (Ta=25鈩?
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation錛圱otal, Ta=25鈩冿級(jí)
Junction temperature
Storage temperature
RATING
50
10
50
100
200
150
錛?50
-55錕?frac12;錕斤紜150
UNIT
V
V
V
mA
mA
mW
鈩?/div>
鈩?/div>
MARKING
鈶モ懁鈶?/div>
.
T AA
鈶犫憽鈶?/div>
ISAHAYA ELECTRONICS CORPORATION
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