鈶?/div>
0.2
Unit
錛歮m
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
0鈭?.1
鈶?/div>
RTr1
鈶?/div>
R1
R2
R2
鈶?/div>
R1
鈶?/div>
RTr2
鈶?/div>
TERMINAL
CONNECTOR
鈶?/div>
錛欵MITTER1
鈶?/div>
錛欱ASE1
鈶?/div>
錛欳OLLECTOR2
鈶?/div>
錛欵MITTER2
鈶?/div>
錛欱ASE2
鈶?COLLECTOR1
JEITA錛歋C-88
0.9
0.65
鈶?/div>
MAXIMUM RATING (Ta=25
鈩?
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
錛圱otal,
Ta=25鈩?/div>
錛?/div>
Junction temperature
Storage temperature
RATING
50
6
50
100
200
150
錛?50
-55鈭鹼紜150
UNIT
V
V
V
mA
mA
mW
鈩?/div>
鈩?/div>
6
5
4
MARKING
.
T3 3
2
3
錛?/div>
ISAHAYA ELECTRONICS CORPORATION
RT3T33M相關(guān)型號(hào)PDF文件下載
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