鈶?/div>
0.2
Unit錛歮m
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
0.9
0.65
鈶?/div>
鈶?/div>
R1
R2
0鈭?.1
鈶?/div>
RTr2
RTr1
R2
R1
TERMINAL
CONNECTOR
鈶狅細(xì)EMITTER1
鈶★細(xì)BASE1
鈶細(xì)COLLECTOR2
鈶ｏ細(xì)EMITTER2
鈶わ細(xì)BASE2
鈶?COLLECTOR1
JEITA錛歋C-88
鈶?/div>
鈶?/div>
鈶?/div>
MAXIMUM RATING (Ta=25鈩?
SYMBOL
V
CBO
V
EBO
V
CEO
V
IN
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input Voltage
Collector current
Peak Collector current
Collector dissipation錛圱otal, Ta=25鈩冿級(jí)
Junction temperature
Storage temperature
RATING
-50
-10
-50
-40
-100
-200
150
錛?50
-55鈭鹼紜150
UNIT
V
V
V
V
mA
mA
mW
鈩?/div>
鈩?/div>
6
5
4
MARKING
.
錛?/div>
P1 1
2
3
ISAHAYA ELECTRONICS CORPORATION
RT3P11M相關(guān)型號(hào)PDF文件下載
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