PRELIMINARY
RT3N66U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3N66U is a composite transistor built with two
RT1N430 in USM6F package.
OUTLINE DRAWING
1.6
鹵0.05
1pin 錁忥拷½錕斤拷½錕?/div>
1.2
鹵0.05
Unit錛歮m
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
1.6
鹵0.05
1. 0
0.5
0.5
(0.5)
6
1
(0.95)
2
(0.5)
5
0.2
鹵0.05
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
3
(桅0.1
錕?frac12;錕?.2)
4
鈥?/div>
0.5
鹵0.05
0.12
鹵0.05
鈶?/div>
RTr
鈶?/div>
R1
R2
R1
鈶?/div>
鈶?/div>
RTr
鈶?/div>
TERMINAL
CONNECTOR
鈶狅細(xì)EMITTER1
鈶★細(xì)BASE1
鈶細(xì)COLLECTOR2
鈶ｏ細(xì)EMITTER2
鈶わ細(xì)BASE2
鈶?COLLECTOR1
JEITA錛氾紞
ISAHAYA錛歎SM6F
鈶?/div>
MAXIMUM RATING (Ta=25鈩?
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation錛圱otal, Ta=25鈩冿級
Junction temperature
Storage temperature
RATING
50
6
50
100
200
125
錛?50
-55錕?frac12;錕斤紜150
UNIT
V
V
V
mA
mA
mW
鈩?/div>
鈩?/div>
錛?/div>
2
3
6
5
4
MARKING
66
ISAHAYA ELECTRONICS CORPORATION
RT3N66U相關(guān)型號PDF文件下載
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