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RT3K11M Datasheet

  • RT3K11M

  • Composite Transistor

  • 4頁(yè)

  • ISAHAYA

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RT3K11M
Composite Transistor
For high speed switching
Silicon N-channel MOSFET
DESCRIPTION
RT3K11M is a composite transistor built with two
INK0001AX
chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
鈶?/div>
0.65
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
0.2
Unit錛歮m
FEATURE
銉籌nput impedance is high, and not necessary to consider a drive
electric current.
銉籚th is low, and drive by low voltage is possible. Vth=0.6錕?frac12;錕?.2V
銉籐ow on Resistance. Ron=3.5惟(TYP)
銉籋igh speed switching.
銉籗mall package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65
0.13
0錕?frac12;錕?.1
鈶?/div>
Tr.1
0.9
0.65
鈶?/div>
鈶?/div>
Tr.2
TERMINAL
CONNECTOR
鈶狅細(xì)SOURCE1
鈶★細(xì)GATE1
鈶細(xì)DRAIN2
鈶ｏ細(xì)SOURCE2
鈶わ細(xì)GATE2
鈶?DRAIN1
JEITA錛歋C-88
鈶?/div>
鈶?/div>
鈶?/div>
MAXIMUM RATING (Ta=25鈩?
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
50
UNIT
V
V
mA
mW
鈩?/div>
鈩?/div>
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation錛圱a=25鈩冿級(jí)
Channel temperature
Range of Storage temperature
鹵8
100
150
錛?25
-55錕?frac12;錕斤紜125
.
.
錛紤 錛?/div>
錛?/div>
2
3
ISAHAYA ELECTRONICS CORPORATION

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