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PRELIMINARY

RT3J33M

Composite Transistor

For high speed switching

Silicon

錛?channel

MOSFET

DESCRIPTION

RT3J33M is a composite transistor built with two

INJ0003AX

chips in SC-88 package.

OUTLINE DRAWING

2.1

1.25

鈶?/div>

0.65

鈶?/div>

0.2

Unit錛歮m

FEATURE

銉籌nput impedance is high, and not necessary to consider a drive

electric current.

銉籚th is low, and drive by low voltage is possible. Vth=0.6錕?frac12;錕?.2V

銉籐ow on Resistance. Ron=2惟(TYP)

銉籋igh speed switching.

銉籗mall package for easy mounting.

2.0

APPLICATION

high speed switching , Analog switching

0.65

0.13

0錕?frac12;錕?.1

鈶?/div>

Tr.1

0.9

0.65

鈶?/div>

Tr.2

TERMINAL

CONNECTOR

鈶狅細SOURCE1

鈶★細GATE1

鈶細DRAIN2

鈶ｏ細SOURCE2

鈶わ細GATE2

鈶?DRAIN1

JEITA錛歋C-88

鈶?/div>

MAXIMUM RATING (Ta=25鈩?

SYMBOL

V

DSS

V

GSS

I

D

P

D

T

ch

T

stg

PARAMETER

RATING

UNIT

V

mA

mW

鈩?/div>

6

5

4

MARKING

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation錛圱a=25鈩冿級

Channel temperature

Range of Storage temperature

-20

鹵8

-200

150

錛?25

-55錕?frac12;錕斤紜125

.

錛紦錛?/div>

錛?/div>

2

3

ISAHAYA ELECTRONICS CORPORATION

型號

版本

描述

廠商

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RT3J33M Datasheet

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