鈶?/div>
0.2
Unit錛歮m
FEATURE
Silicon pnp epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
For low frequency amplify application
0.65
0.65
0錕?frac12;錕?.1
Tr1
Tr2
TERMINAL
CONNECTOR
鈶狅細(xì)EMITTER1
鈶★細(xì)BASE1
鈶細(xì)COLLECTOR2
鈶o細(xì)EMITTER2
鈶わ細(xì)BASE2
鈶?COLLECTOR1
JEITA錛歋C-88
MAXIMUM RATING (Ta=25鈩?
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation錛圱otal,Ta=25鈩冿級
Junction temperature
Storage temperature
RATING
-60
-6
-50
-200
150
錛?25
-55錕?frac12;錕斤紜125
UNIT
V
V
V
mA
mW
鈩?/div>
鈩?/div>
6
5
4
MARKING
.
錛?/div>
AMM
2
3
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
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