RT2N12M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2N12M is a composite transistor with built-in bias resistor
OUTLINE DRAWING
2.1
1.25
Unit:mm
鈼廈uilt-in bias resistor ( R1=4.7 K惟 , R2=47K惟 )
鈼廙ini package for easy mounting
2.0
0.65
鈶?/div>
鈶?/div>
0.65
鈶?/div>
鈶?/div>
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
鈶?/div>
0.9
0.65
鈶?/div>
RTr1
鈶?/div>
RTr2
0鈭?.1
R1
鈶?/div>
R2
鈶?/div>
R2
鈶?/div>
R1
TERMINAL CONNECTOR
鈶?/div>
錛欱ASE錛?/div>
鈶?/div>
錛欵MITTER
錛圕OMMON
錛?/div>
鈶?/div>
錛欱ASE錛?/div>
鈶?/div>
錛欳OLLECTOR錛?/div>
鈶?/div>
錛欳OLLECTOR錛?/div>
JEITA錛氣垝
JEDEC
錛氣垝
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
錛圱a=25鈩?錛?/div>
錛塕Tr1銆丷Tr2
錛?/div>
Parameter
Ratings
50
6
50
100
200
150
錛?50
-55鈭鹼紜150
Unit
V
V
V
mA
mA
mW
鈩?/div>
鈩?/div>
MARKING
鈶?/div>
鈶?/div>
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
錛圱otal
Ta=25鈩?/div>
錛?/div>
Junction temperature
Storage temperature
N
H
鈶?/div>
鈶?鈶?/div>
ISAHAYA ELECTRONICS CORPORATION
0.13
0.2
FEATURE
RT2N12M相關(guān)型號(hào)PDF文件下載
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