RT2N05M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2N05M is a compo錕?frac12;錕斤拷½錕斤拷½錕斤拷½錕?transistor with built-in bias resistor
OUTLINE DRAWING
2.1
1.25
Unit:mm
鈼廈uilt-in bias resistor ( R1=47 K惟 , R2=47K惟 )
鈼廙ini package for easy mounting
2.0
0.65
鈶?/div>
鈶?/div>
0.65
鈶?/div>
鈶?/div>
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
鈶?/div>
0.9
0.65
鈶?/div>
RTr1
鈶?/div>
RTr2
0鈭?.1
R1
鈶?/div>
R2
鈶?/div>
R2
鈶?/div>
R1
TERMINAL CONNECTOR
鈶狅細(xì)BASE錛?/div>
鈶★細(xì)EMITTER錛圕OMMON錛?/div>
鈶細(xì)BASE錛?/div>
鈶ｏ細(xì)COLLECTOR錛?/div>
鈶わ細(xì)COLLECTOR錛?/div>
JEITA錛氣垝
JEDEC錛氣垝
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
I
C
CM
錛圱a=25鈩冿級(jí)錛圧Tr1銆丷Tr2錛?/div>
Parameter
Ratings
50
10
50
100
200
150
錛?50
-55鈭鹼紜150
Unit
V
V
V
mA
mA
mW
鈩?/div>
鈩?/div>
MARKING
鈶?/div>
鈶?/div>
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation錛圱otal Ta=25鈩冿級(jí)
Junction temperature
Storage temperature
N 5
鈶?/div>
鈶?鈶?/div>
P
C
T
j
T
stg
ISAHAYA ELECTRONICS CORPORATION
0.13
0.2
FEATURE
RT2N05M相關(guān)型號(hào)PDF文件下載
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