RSX101M-30
Diodes
Shottky barrier diode
RSX101M-30
Application
High efficient shottky barrier diode
Rectifier for power supply units
Battery protection against reversal current
External dimensions
(Unit : mm)
CATHODE MARK
0.9鹵0.1
0.1鹵
0.1
0.05
2.6鹵0.1
Features
1) Small mold type. (PMDU (2616) )
2) High reliability.
(ESD resistance typ=12kV (machine model) )
3) Low V
F
/ Low I
R
.
(V
F
=0.35V at 1A / I
R
=90碌A(chǔ) at 30V)
1.6鹵0.2
ROHM : PMDU
EIAJ :
鈭?/div>
JEDEC :
0.80鹵0.1
Structure
Silicon Epitaxial Planer
Absolute maximum ratings
(Ta=25擄C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward peak surge current (60Hz / 1cyc.)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
30
1
45
150
鈭?0
to 150
Unit
V
V
A
A
擄C
擄C
Electrical characteristics
(Ta=25擄C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Electro static discharge resistance
Symbol
V
F
I
R
C
T
ESD
Min.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
0.35
90
60
12
Max.
0.39
200
鈭?/div>
鈭?/div>
Unit
V
碌A(chǔ)
pF
kV
Conditions
I
F
=1A
V
R
=30V
V
R
=10V,
f=1MHz
C=200pF, R=0鈩?1puls
Rev.A
3.5鹵0.2
75
1/2
RSX101M-30相關(guān)型號(hào)PDF文件下載
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1
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